内容简介 ：
本文是Samsung公司关于使用NAND Flash的应用笔记。内容只涉及到了512字节页面的NAND Flash。内容如下:
1. SYSTEM INTERFACING
1-1. NAND Flash Architecture
1-2. Designing for Systems with O/S
1-3. Designing for O/S-less System
1-4. ECC Design Guide
1-5. Development Tool
2. INVALID BLOCK(S) MANAGEMENT
2-1. Identifying Initial Invalid Block(s)
2-2. Management of Additional Invalid Block(s)
2-3. Wear- Leveling Algorithm
2-4. Data Retention
2-5. Effect of P/E Cycling on Performance
3. PROGRAM/ERASE ALGORITHM
3-1. Erase Algorithm
3-2. Program Algorithm
3-3. Status Read Operation
3-4. Partial Page Program
4. OPERATING WITH COMMANDS
4-1. Prohibition of Unspecified Commands
4-2. Pointer Control for '00H', '01H', '50H’
4-3. Device Status after Read/Program/Erase/Reset and Power-on
4-4. Acceptable Commands after Sequential Input Command of '80H’
5. UTILIZING THE DEVICE IN THE SAME SYSTEM DESIGN
5-1. Pin Assignment(4Mb,8Mb,16Mb,32Mb,64Mb)
5-2. Pin Assignment(128Mb,256Mb)
5-3. Device ID Information
5-4. Addressing Map : 4Mb ~ 256Mb
5-5. Specification Comparison :4Mb ~ 256Mb
5-6. Upgrading to 512Mb and 1Gb
6. HARDWARE DESIGN CONSIDERATIONS
6-1. Acceptable Don`t-Care Area in Each Operation
6-2. VccQ/ Vcc Power Configuration
6-3. Data Protection
6-4. R/B : Termination for the R/B Pin
7. MISCELLANEOUS
7-1. Device Behavior for WP/ Signal
7-2. Device Behavior for Excess Data Input Cycles
7-3. Reset Operation........